PT/PB(ZR,TI)O3/PT 박막의 전기적 특성과 공진주파수에 관한 연구

초록

The modeled resonant frequency and electrical properties of Pb(Zr, Ti)O3 (PZT) film with various thicknesses have been investigated in film bulk acoustic wave resonators (FBARs). PZT films and Pt electrodes were fabricated by rf-magnetron sputtering. Fabrication process of electrodes and PZT were patterned by simple lift-off process and then back side of silicon was etched by 45wt% KOH. The crystal structure of PZT films with 0.5, 1 and 2 μm thickness was investigated by x-ray deflection (XRD) and scanning electron microscopy (SEM). The dielectric constant and performance characteristics of PZT FBAR strongly depended on the film thickness. The resonant frequency of PZT films decreased with increasing film thickness. These sputtered PZT FBAR with simple lift-off process enable us to fabricate high Q values with resonant frequencies. (0.71 - 1.48 GHz)